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US 12,767,884 B2Granted
Photoelectric devices
AssigneeTcl Technology Group Corporation
InventorsTianfeng Wang, Yixing Yang
Life of this patent
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Abstract
A photoelectric device, which includes an anode, a hole transport layer, a quantum dot light-emitting layer and a cathode arranged in sequence, the hole transport layer contains at least two hole transport materials, and the at least two hole transport materials includes a hole transport layer with an absolute value of a maximum energy level of valence band of the transport material being smaller than or equal to 5.3 eV, and a hole transport layer with an absolute value of a maximum energy level of valence band being greater than 5.3 eV.
Claims17
A photoelectric device, comprising:
- an anode, a hole transport layer arranged on the anode, a quantum dot light-emitting layer arranged on the hole transport layer, and a cathode arranged on the quantum dot light-emitting layer, the hole transport layer containing a hole transport material,
- wherein the hole transport material comprises a first hole transport material with an absolute value of a maximum energy level of valence band being smaller than or equal to 5.3 eV,
- wherein the hole transport material further comprises at least one of a second hole transport material with an absolute value of a maximum energy level of valence band being greater than 5.3 eV and smaller than 5.8 eV and a third hole transport material with an absolute value of a maximum energy level of valence band being greater than or equal to 5.8 eV, and
- wherein the first hole transport material with the absolute value of the maximum energy level of valence band being smaller than or equal to 5.3 eV comprises at least one of:
- P09 and P13.
2 more elements
Dependencies are inferred from the claim text.