Polishing state analysis prediction program, storage device, cathodeluminescence device, and polishing state analysis prediction method

A non-transitory computer-readable storage medium storing therein programming instructions for a polishing state analysis prediction program to predict final polishing time of a polishing-target substrate to be polished, the instructions, when executed by a computer, causing the computer to perform the steps of:

• detecting cathodeluminescence light emitted from the substrate;
• obtaining, based on the cathodeluminescence light emitted from the substrate, a cathodeluminescence image of each predetermined time after a start of polishing;
• calculating a black line density from each cathodeluminescence image;
• plotting each calculated black line density and extracting a plot of a polishing time range in which the black line density decreases from 106 cm−2 to 104 cm−2;
• fitting a plot of a polishing time range in which the black line density decreases from 106 cm−2 to 104 cm−2 by using a linear function;
• and
• calculating, as the final polishing time, a time which is taken for the black line density in the formula to reach a threshold of less than 104 cm−2.

A cathodeluminescence device configured to predict a future polishing state of a polishing-target substrate to be polished, the device comprising:

• an electron beam irradiation device configured to emit an electron beam onto the substrate;
• a cathodeluminescence photodetector configured to detect cathodeluminescence light emitted from the substrate;
• and
• a calculation device comprising a central processing unit and a computer-readable storage medium storing programming instructions that, when executed by the central processing unit, cause the central processing unit to:
• obtain, based on the cathodeluminescence light emitted from the substrate and detected by the cathodeluminescence photodetector, a cathodeluminescence of each predetermined time after a start of polishing;
• calculate an average light emission intensity data or average luminance data of each cathodeluminescence image;
• and
• plot the average light emission intensity data or the average luminance data, and derive a formula of a fitting curve resulted from the plotting by using a predetermined function;
• and
• calculate a polishing rate based on the formula of the fitting curve.

A cathodeluminescence device configured to predict a final polishing time of a polishing-target substrate to be polished, the device comprising:

• an electron beam irradiation device configured to emit an electron beam onto the substrate;
• a cathodeluminescence photodetector configured to detect cathodeluminescence light emitted from the substrate;
• and
• a calculation device comprising a central processing unit and a computer-readable storage medium storing programming instructions that, when executed by the central processing unit, cause the central processing unit to:
• obtain, based on the cathodeluminescence light emitted from the substrate and detected by the cathodeluminescence photodetector, a cathodeluminescence image of each predetermined time after a start of polishing;
• calculate a black line density from each cathodeluminescence image obtained;
• plot each black line density calculated and extract a plot of a polishing time range in which a black line density decreases from 106 cm−2 to 104 cm−2;
• perform a linear function fitting in the plot, and derive a formula representing a fitting linear line;
• and
• calculate, as final polishing time, a time which is taken for a black line density in the formula to reach a threshold of less than 104 cm−2.

A computer-implemented polishing state analysis prediction method to predict a future polishing state of a polishing-target substrate to be polished, the polishing state analysis prediction method comprising:

• emitting an electron beam onto the substrate;
• detecting cathodeluminescence light emitted from the substrate;
• obtaining, based on the cathodeluminescence light emitted from the substrate, a cathodeluminescence image of each predetermined time after a start of polishing;
• calculating average light emission intensity data or average luminance data of each cathodeluminescence image;
• plotting the average light emission intensity data or the average luminance data, and deriving a formula representing a fitting curve resulted from the plotting by using a predetermined function;
• and
• calculating a polishing rate based on the formula of the fitting curve.

A computer-implemented polishing state analysis predicting method to predict final polishing time of a polishing-target substrate to be polished, the polishing state analysis prediction method comprising:

• emitting an electron beam onto the substrate;
• detecting cathodeluminescence light emitted from the substrate;
• obtaining, based on the cathodeluminescence light emitted from the substrate, a cathodeluminescence image of each predetermined time after a start of polishing;
• calculating a black line density from each cathodeluminescence image;
• plotting each calculated black line density to derive a formula representing a fitting linear line;
• fitting a plot of a polishing time range in which a black line density decreases from 106 cm−2 to 104 cm−2 by using a linear function;
• and
• calculating, as final polishing time, a time which is taken for the black line density in the formula to reach a threshold of less than 104 cm−2.