Method of manufacturing an interconnect structure with a metal cap

A method, comprising:

• depositing a first conductive structure in a recess of a first dielectric layer;
• depositing a metal cap on the first conductive structure, wherein an upper surface of the metal cap is coplanar with an upper surface of the first dielectric layer, wherein the metal cap substantially overlaps an entire top surface of the first conductive structure, and wherein an entire surface of sidewalls of the metal cap is surrounded by the first dielectric layer;
• depositing a second dielectric layer on the first dielectric layer and on the metal cap;
• depositing a third dielectric layer on the second dielectric layer;
• and
• forming a second conductive structure on the metal cap, wherein a width of the second conductive structure is equal to a width of the first conductive structure.

A method, comprising:

• forming a recess in a first dielectric layer;
• forming a first conductive structure in the recess;
• depositing a metal cap on the first conductive structure and within the recess,
• wherein an upper surface of the metal cap is coplanar with an upper surface of the first dielectric layer,
• wherein sidewalls of the metal cap are aligned with sidewalls of the first conductive structure, and
• wherein an entire surface of the sidewalls of the metal cap is surrounded by the first dielectric layer;
• forming a second dielectric layer on the first dielectric layer and around the metal cap;
• and
• forming a second conductive structure on the metal cap and in the second dielectric layer,
• wherein sidewalls of the second conductive structure are in direct contact and aligned with the sidewalls of the metal cap,
• wherein a width of the second conductive structure is equal to a width of the first conductive structure, and
• wherein an upper surface of the second conductive structure resides above an upper surface the second dielectric layer.