Method of forming redistribution layer structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHung-Jui Kuo, Hui-Jung Tsai, Jyun-Siang Peng, Chia-Wei Wang
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Abstract
A conductive structure, a semiconductor package and methods of forming the same are disclosed. A conductive structure includes a metal feature, an insulating layer and a nitridized metal layer. The metal feature is disposed over a substrate and includes a lower metal pattern and an upper metal pattern over the lower metal pattern. The insulating layer surrounds the metal feature. The nitridized metal layer is disposed between the lower metal pattern and the upper metal pattern.
Claims20
A method of forming a redistribution layer structure, comprising:
- forming a first metal via over a die and forming a first polymer layer around the first metal via;
- forming a seed layer over the first metal via and the first polymer layer;
- forming a bottom anti-reflection coating layer over the seed layer;
- forming a first photoresist layer over the bottom anti-reflection coating layer, wherein the first photoresist layer has a trench pattern that exposes a portion of the bottom anti-reflection coating layer;
- removing the exposed portion of the bottom anti-reflection coating layer, so that the trench pattern of the first photoresist layer exposes a portion of the seed layer;
- forming a first metal line in the trench pattern of the first photoresist layer by using the exposed seed layer as a seed;
- removing the first photoresist layer;
- and
- forming a first nitridized metal layer from a surface portion of the first metal line.
A method of forming a redistribution layer, comprising:
- forming a seed layer over a die;
- forming a bottom anti-reflection coating layer over the seed layer;
- forming a first photoresist layer over the bottom anti-reflection coating layer, wherein the first photoresist layer has a trench pattern that exposes a portion of the bottom anti-reflection coating layer;
- removing the exposed portion of the bottom anti-reflection coating layer, so that the trench pattern of the first photoresist layer exposes a portion of the seed layer;
- forming a metal line in the trench pattern of the first photoresist layer by using the exposed seed layer as a seed;
- removing the first photoresist layer;
- and
- performing a nitrogen-containing plasma to the metal line and the bottom anti-reflection coating layer aside the metal line, so as to form a nitridized metal layer from a surface portion of the metal line.
A method of forming a redistribution layer, comprising:
- forming a seed layer over a die;
- forming a metal line by using the seed layer as a seed;
- performing a nitrogen-containing plasma to an entire top surface and entire sidewalls of the metal line, so as to form a metal protection layer from the entire top surface and the entire sidewalls of the metal line;
- and
- forming a metal via by using the metal protection layer as a seed.
Dependencies are inferred from the claim text.