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US 12,765,401 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeNanya Technology Corporation
InventorHsih-Yang Chiu
Life of this patent
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Abstract
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes an interposer, a conductive via, an insulation layer, and a first electronic component. The interposer has a first surface and a second surface opposite to the first surface. The conductive via extends between the first surface and the second surface of the interposer. The insulation layer separates the conductive via from the interposer. The first electronic component is disposed on the second surface and electrically connected to the conductive via.
Claims10
A semiconductor device, comprising:
- an interposer having a first surface and a second surface opposite to the first surface, wherein the interposer defines a first cavity and a second cavity extending between the first surface and the second surface;
- a through-insulation via (TIV) disposed within the first cavity;
- a first electronic component disposed on the second surface of the interposer and electrically connected to the TIV;
- a second electronic component disposed within the second cavity at a position that the second electronic component is embedded within the interposer;
- an insulation layer disposed within the first cavity and penetrating the interposer;
- and
- an encapsulant disposed within the second cavity and encapsulating the second electronic component, wherein the encapsulant fully penetrates the interposer;
- wherein the first cavity and the second cavity are recessed from the first surface of the interposer to define a bottom of the first cavity and a bottom of the second cavity above the second surface of the interposer;
- wherein a depth of the first cavity is equal to a depth of the second cavity.
6 more elements
Dependencies are inferred from the claim text.