Manufacturing method of heat dissipation layer and manufacturing method of semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJin-Hao Jhang, Yu-Hsiang Yen, Wei-Yen Woon
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Abstract
A manufacturing method of a heat dissipation layer is provided. A first carrier substrate and a second carrier substrate creating a first confined space therebetween are provided. A first seed layer is formed on the first carrier substrate and a second seed layer is formed on the second carrier substrate. A first heat dissipation layer is formed from the first seed layer and the second seed layer in the first confined space. The second carrier substrate is removed from the first heat dissipation layer.
Claims20
A manufacturing method of a heat dissipation layer, comprising:
- providing a first carrier substrate and a second carrier substrate creating a first confined space therebetween;
- forming a first seed layer on the first carrier substrate and a second seed layer on the second carrier substrate;
- forming a first heat dissipation layer from the first seed layer and the second seed layer in the first confined space, wherein the first heat dissipation layer is formed with first grains grown from the first seed layer and second grains grown from the second seed layer;
- and
- removing the second carrier substrate from the first heat dissipation layer.
A manufacturing method of a semiconductor device, comprising:
- sequentially forming a device layer, a first interconnect structure and a first bonding layer over a substrate;
- forming a heat dissipation layer on a first carrier substrate, comprising:
- providing the first carrier substrate and a second carrier substrate stacking over the first carrier substrate, wherein a confined space is between the first carrier substrate and the second carrier substrate;
- forming a first seed layer on the first carrier substrate and a second seed layer on the second carrier substrate;
- growing the heat dissipation layer from the first seed layer and the second seed layer in the confined space;
- and
- removing the second carrier substrate to expose a surface of the heat dissipation layer;
- bonding the heat dissipation layer onto the first interconnect structure by the first bonding layer;
- removing the substrate to expose the device layer;
- and
- forming a second interconnect structure on the device layer.
A manufacturing method of a semiconductor device, comprising:
- sequentially forming a device layer and a first interconnect structure over a substrate;
- removing the substrate to expose the device layer;
- sequentially forming a second interconnect structure and a first bonding layer on the device layer;
- providing a heat dissipation layer formed on a first carrier substrate, comprising:
- providing the first carrier substrate and a second carrier substrate stacking over the first carrier substrate, wherein the first carrier substrate and the second carrier substrate are spaced apart from each other along a stacking direction;
- forming a first seed layer on the first carrier substrate and a second seed layer on the second carrier substrate;
- growing the heat dissipation layer from the first seed layer and the second seed layer between the first carrier substrate and the second carrier substrate;
- and
- removing the second carrier substrate to expose a surface of the heat dissipation layer;
- forming a second bonding layer on the exposed surface of the heat dissipation layer;
- and
- bonding the heat dissipation layer onto the second interconnect structure by the first bonding layer and the second bonding layer.
Dependencies are inferred from the claim text.