Manufacturing method of semiconductor device and semiconductor manufacturing apparatus

A manufacturing method, comprising:

• etching a resin so that a filler is exposed from a surface of the resin containing the filler;
• measuring an exposed amount of the filler by measuring optical properties of the surface of the resin;
• and
• forming a conductive film on the surface of the resin after the measuring of the optical properties, wherein
• measuring the optical properties of the surface of the resin includes:
• measuring a color of the surface of the resin, and
• calculating a color difference between a reference color and the measured color of the surface of the resin,
• etching the resin includes a cleaning etch to clean the surface of the resin followed by a second etch to remove portions of the resin,
• the cleaning etch and the second etch are each a plasma process,
• the cleaning etch is performed using a first gas that includes argon and does not include nitrogen, and
• the second etch is performed using a second gas that includes both argon and nitrogen.