Semiconductor device comprising guard ring and methods of formation

A semiconductor device, comprising:

• an integrated circuit;
• a guard ring structure surrounding the integrated circuit in a top view of the semiconductor device,
• wherein the guard ring structure comprises:
• a first plurality of conductive structures,
• wherein the first plurality of conductive structures extend in a first direction in the semiconductor device and are arranged in a second direction in the semiconductor device that is approximately perpendicular to the first direction;
• a second plurality of conductive structures,
• wherein the second plurality of conductive structures extend in the second direction and are arranged in the first direction, and
• wherein a first length of a first subset of the second plurality of conductive structures is greater than a second length of a second subset of the second plurality of conductive structures;
• and
• plurality of polysilicon structures extending in the first direction,
• wherein each of the polysilicon structures is located between adjacent pairs of the first plurality of conductive structures;
• a first interconnect structure above the guard ring structure,
• wherein at least a first subset of the first plurality of conductive structures is within a footprint of the first interconnect structure;
• and
• a second interconnect structure above the guard ring structure,
• wherein at least a second subset of the first plurality of conductive structures is within a footprint of the second interconnect structure.

A method, comprising:

• providing an active region around an integrated circuit of a semiconductor device;
• forming, above the active region, a first plurality of conductive structures extending in a first direction of the semiconductor device and arranged in a second direction in the semiconductor device that is approximately perpendicular with the first direction;
• forming, above the active region, a second plurality of conductive structures extending in the second direction and arranged in the first direction,
• wherein the first plurality of conductive structures and the second plurality of conductive structures intersect to form a guard ring structure above the active region;
• and
• forming one or more interconnect structures above the guard ring structure.