Semiconductor device structure including a vertical fuse structure

A semiconductor device structure, comprising:

• a semiconductor substrate having a first surface and a second surface opposite to the first surface;
• a fuse structure at least partially disposed within the semiconductor substrate;
• a circuit region electrically connected to the fuse structure,
• a conductive via disposed over the second surface of the semiconductor substrate;
• and
• a conductive layer disposed over the conductive via,
• wherein the fuse structure comprises a first fuse element, a second fuse element, and a fuse medium connecting the first fuse element and the second fuse element, and wherein the first fuse element, the second fuse element, and the fuse medium are arranged along a first direction from the first surface toward the second surface of the semiconductor substrate;
• wherein the circuit region is electrically connected to the fuse structure through the conductive via and the conductive layer;
• wherein the fuse medium is located at an elevation substantially the same as that of the conductive via.