Methods for forming conductive vias, and associated devices and systems

A semiconductor device, comprising:

• a first electrically conductive feature;
• a second electrically conductive feature spaced apart from the first electrically conductive feature along a first axis;
• and
• a ring, wherein an insulative material is disposed between inner sidewalls of the rectangular annulus ring, and wherein the ring comprises:
• a first side extending over the first electrically conductive feature along a second axis that is orthogonal to the first axis, wherein the first side comprises a first electrically conductive via formed over the first electrically conductive feature, and
• a second side that (i) is spaced apart from the first side along the first axis and (ii) extends over the second electrically conductive feature along the second axis, wherein the second side comprises a second electrically conductive via formed over the second electrically conductive feature.

A semiconductor device, comprising:

• an electrically conductive feature;
• a first insulative material having a first vertical sidewall;
• a second insulative material having a second vertical sidewall concentric with the first vertical sidewall;
• and
• a ring formed between the first vertical sidewall of the first insulative material and the second vertical sidewall of the second insulative material, the ring comprising:
• a via of electrically conductive material formed over the electrically conductive feature and extending along a first portion of the first vertical sidewall, the via being electrically connected to the electrically conductive feature,
• a first portion of electrically non-conductive liner material formed partially over the electrically conductive feature and extending away from the via along a second portion of the first vertical sidewall in a first direction, and
• a second portion of the electrically non-conductive liner material formed partially over the electrically conductive feature and extending away from the via along a third portion of the first vertical sidewall in a second direction opposing the first direction, wherein the first insulative material is different than the electrically non-conductive liner material.