Method for producing a pretreated composite substrate, and pretreated composite substrate

A method for producing a pretreated composite substrate which serves as a basis for further processing into electronic semiconductor components, the method comprising the steps of:

• a) providing a donor substrate comprising monocrystalline SiC, wherein the donor substrate has a first layer extending from a first surface of the donor substrate to a predetermined doping depth, followed by a remaining portion of the donor substrate;
• b) doping the first layer in the donor substrate in its entirety by ion implantation using an ion beam of ions of N, P, or Al, which passes through an energy filter, wherein the energy filter is a microstructured membrane having a predefined structure profile for adapting a dopant depth profile and/or defect depth profile caused by the implantation in the first layer in the donor substrate, wherein the doping creates a predetermined dopant depth profile and/or a predetermined defect depth profile in the first layer of the donor substrate, wherein the doping of the first layer extends from the first surface of the donor substrate, which faces the ion beam, up to the predetermined doping depth, wherein the doping of the first layer with the ions of N, P or Al affords p-doping or n-doping with a doping concentration in the first layer of 1E15 cm−3 to 5E17 cm−3;
• c) creating an intended breakage site in the donor substrate by additional ion implantation that is different from the step of doping the first layer, electron irradiation, or laser irradiation;
• d) providing the acceptor substrate and producing a bond between the donor substrate and the acceptor substrate, wherein the first layer is arranged in a region between the acceptor substrate and the remaining portion of the donor substrate;
• e) splitting the donor substrate in the region of the intended breakage site to create the pretreated composite substrate, wherein the pretreated composite substrate comprises the acceptor substrate and a doped layer bonded thereto, wherein the doped layer comprises at least a section of the first layer of the donor substrate.