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US 12,765,301 B2Granted
Apparatus and method for supplying gas, facility for processing substrate
AssigneeSemes Co., Ltd.
InventorsHae Won Choi, Hong Chan Cho, Eun Mi Kim
Life of this patent
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Abstract
Provided is an apparatus for supplying gas in a facility for processing a substrate, the apparatus for supplying gas in a facility for processing a substrate including: a gas supply line connecting a gas storage unit and a process chamber for processing a substrate; and a flow control unit installed in the gas supply line, and controlling a gas flow rate of drying gas supplied through the gas supply line with a metering valve and a mass flow controller (MFC) disposed in parallel.
Claims9
An apparatus for supplying gas in a facility for processing a substrate, the apparatus comprising:
- a gas supply line connecting a gas storage unit and a process chamber for processing a substrate;
- and
- a flow control unit installed in the gas supply line, and controlling a gas flow rate of drying gas supplied through the gas supply line through a metering valve and a mass flow controller, the metering valve and the mass flow controller being disposed in parallel and the drying gas being a supercritical fluid,
- wherein the gas supply line comprises a plurality of branch lines, disposed in parallel,
- wherein the flow control unit comprises,
- a first control unit having a first on-off valve and the mass flow controller;
- and
- a second control unit having a second on-off valve and the metering valve,
- wherein the first control unit and the second control unit are installed on different branch lines among the plurality of branch lines,
- wherein the mass flow controller controls a flow rate of the drying gas at a first flow rate range that is lower than a second flow rate range used by the metering valve to control the flow rate of the driving gas,
- wherein the second control unit is provided in plural, and the plurality of second control units are respectively installed on different branch lines among the plurality of branch lines,
- wherein the plurality of metering valves of the plurality of second control units are set to have different opening rates, respectively, and
- wherein the plurality of metering valves of the plurality of second control units are set to sequentially increase opening rates to control the flow rate of the drying gas using a multilevel fixed metering rate supply control method at the second flow rate range that is higher than the first flow rate range used by the mass flow controller.
10 more elements
A facility for processing a substrate, the facility comprising:
- agas storage unit, that stores a drying gas, the drying gas being a supercritical fluid;
- a process chamber for drying a substrate;
- a gas supply line connecting the gas storage unit and the process chamber;
- a gas discharge line connected to the process chamber;
- and
- a flow control unit installed in the gas supply line, and controlling a gas flow rate of the drying gas supplied through the gas supply line through a metering valve and a mass flow controller, the metering valve and the mass flow controller being disposed in parallel,
- wherein the gas supply line includes a plurality of branch lines, disposed in parallel,
- wherein the flow control unit includes,
- a second control unit having a second on-off valve and the metering valve;
- and
- a first control unit having a first on-off valve and the mass flow controller,
- wherein the second control unit and the first control unit are installed on different branch lines among the plurality of branch lines,
- wherein the mass flow controller of the first control unit controls a flow rate of the drying gas in a first flow rate range that is lower than a second flow rate range at which the metering valve of the second control unit controller the flow rate of the drying gas,
- wherein the second control unit is provided in plural, and the plurality of second control units are respectively installed on different branch lines among the plurality of branch lines, and
- wherein the plurality of metering valves of the plurality of second control units are set to have different opening rates, respectively, and the plurality of metering valves of the plurality of second control units are set to sequentially increase the opening rate to control the flow rate of the drying gas using a multilevel fixed metering rate supply control method at the second flow rate range that is higher than the first flow rate range used by the mass flow controller.
12 more elements
Dependencies are inferred from the claim text.