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US 12,765,299 B2Granted
System and method for removing impurities during chemical mechanical planarization
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTe-Chien Hou, Po-Chin Nien, Chih Hung Chen, Ying-Tsung Chen, Kei-Wei Chen
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Abstract
A chemical mechanical planarization system includes a chemical mechanical planarization pad that rotates during a chemical mechanical planarization process. A chemical mechanical planarization head places a semiconductor wafer in contact with the chemical mechanical planarization pad during the process. A slurry supply system supplies a slurry onto the pad during the process. A pad conditioner conditions the pad during the process. An impurity removal system removes debris and impurities from the slurry.
Claims20
A system, comprising:
- a chemical mechanical planarization platen configured to rotate;
- a chemical mechanical planarization head configured to hold a wafer and to place the wafer in contact with a chemical mechanical planarization pad on the platen during a chemical mechanical planarization process;
- a pad conditioner configured to condition the chemical mechanical planarization pad during the chemical mechanical planarization process;
- a slurry supply system configured to supply a slurry onto the chemical mechanical planarization pad during the chemical mechanical planarization process;
- and
- an impurity removal system configured to remove debris from the slurry by performing a charged particle separation process, wherein the impurity removal system includes a first electrode and a second electrode, wherein the charged particle separation process includes applying a voltage between the first electrode and the second electrode while the first electrode and the second electrode are positioned on the chemical mechanical planarization pad during the chemical mechanical planarization process.
3 more elements
A system, comprising:
- chemical mechanical planarization equipment configured to perform chemical mechanical planarization related processes on a wafer, wherein the chemical mechanical planarization equipment includes a main polishing station including:
- a chemical mechanical planarization pad;
- a slurry supply system configured to supply a slurry on to the pad;
- and
- a pad conditioner configured to condition the chemical mechanical planarization pad;
- an impurity removal system positioned adjacent to the chemical mechanical planarization equipment and configured to remove charged impurities from the slurry adjacent to the wafer and including:
- a first electrode;
- a second electrode;
- and
- a power source configured to apply a voltage between the first and second electrode;
- and
- a control system configured to control the chemical planarization equipment and the power source, wherein the first and second electrodes are positioned adjacent to the chemical mechanical planarization pad, wherein the first and second electrodes are configured to adsorb the charged impurities from the slurry.
9 more elements
A system, comprising:
- chemical mechanical planarization equipment configured to perform chemical mechanical planarization related processes on a wafer, the chemical mechanical planarization equipment including wafer cleaning equipment including a spray bar configured to spray a cleaning chemical onto the wafer during a cleaning process, and a roller brush configured to clean the wafer during the cleaning process;
- an impurity removal system positioned adjacent to the chemical mechanical planarization equipment and configured to remove charged impurities from the cleaning chemical adjacent to the wafer and including:
- a first electrode and a second electrode positioned adjacent to the spray bar and the roller brush;
- and
- a control system configured to remove charged particles from the wafer by applying a voltage between the first electrode and the second electrode during the cleaning process.
2 more elements
Dependencies are inferred from the claim text.