Co-deposition and etch process

Abstract

A method for selectively etching at least one feature in an etch layer of doped or undoped material of at least one of silicon, silicon germanium, carbon, and germanium with respect to a mask is provided. A simultaneously selectively etching at least one feature in the etch layer with respect to the mask and selectively depositing a deposition layer is provided by providing an etch gas comprising a metalloid or metal containing precursor and a halogen or oxygen containing component, forming the etch gas into a plasma. and exposing the etch layer to the plasma to simultaneously selectively etching at least one feature in the etch layer with respect to the mask and selectively depositing a deposition layer of metalloid or metal containing material over the mask with respect to the etch layer.

Dependencies are inferred from the claim text.