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US 12,765,279 B2Granted
Substrate processing method and substrate processing system
AssigneeTokyo Electron Limited
InventorsTakeshi Itatani, Einosuke Tsuda, Tadahiro Ishizaka, Satoshi Takeda
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Abstract
A method of forming a ruthenium film on a substrate by supplying a ruthenium-containing gas includes: forming an adsorption inhibition layer that inhibits adsorption of the ruthenium-containing gas by supplying an adsorption inhibition gas to an end portion and a rear surface of the substrate; transferring the substrate to a chamber; and forming the ruthenium film on the substrate by supplying the ruthenium-containing gas to the chamber.
Claims12
A method of forming a ruthenium film on a substrate by supplying a ruthenium-containing gas, the method comprising:
- forming an adsorption inhibition layer that inhibits adsorption of the ruthenium-containing gas by supplying an adsorption inhibition gas to an end portion and a rear surface of the substrate;
- transferring the substrate to a chamber;
- and
- forming the ruthenium film on the substrate by supplying the ruthenium-containing gas to the chamber.
1 more element
Dependencies are inferred from the claim text.