Semiconductor device including magnetic tunnel junction structure

A semiconductor device comprising:

• one or more first conductive lines extending in a first direction to carry a current through the one or more first conductive lines;
• one or more electrode layers, each electrode layer spaced apart from a corresponding first conductive line in a third direction crossing the first direction;
• and
• one or more magnetic tunnel junction structures, each magnetic tunnel junction structure interposed between a corresponding first conductive line and a corresponding electrode layer, each of the one or more magnetic tunnel junction structures including a free layer, a pinned layer, and a tunnel barrier layer stacked in the third direction, the free layer disposed adjacent to the corresponding first conductive line, the pinned layer disposed adjacent to the corresponding electrode layer, the tunnel barrier layer interposed between the free layer and the pinned layer,
• wherein each of the one or more magnetic tunnel junction structures includes a first portion that overlaps the corresponding first conductive line and a second portion that does not overlap the corresponding first conductive line, each magnetic tunnel junction structure extending in a second direction crossing the first and third directions,
• the corresponding electrode layer overlaps at least partially the second portion of a corresponding magnetic tunnel junction structure, and
• a thickness of the free layer in the first portion is greater than a thickness of the free layer in the second portion of the corresponding magnetic tunnel junction structure.