Process for the halogen treatment of metal oxide layers
AssigneesHuawei Technologies Canada Co., Ltd., Dong Seob Chung, Hany Maher Aziz
InventorsDong Seob Chung, Hany Maher Aziz
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Abstract
This invention is related to a new treatment process employed during preparation of the ZnO ETL in a QDLED. The treatment involves exposing the ZnO layer to fluorine (F). In embodiments of this invention, the exposure of the ZnO layer to the F is performed using a fluorine plasma environment (e.g., using CF4, CHF3, C4F8 or SF6). Alternatively, the F exposure may be done by exposing the ZnO ETL to a suitable fluorine-containing substance such as fluorine gas or fluorinated solvents. The F plasma treatment of the ZnO improves both QDLED device EQE and EL stability.
Claims15
A process for preparing a halogen-doped metal oxide material comprising the step of exposing a metal oxide layer to a halogen source, wherein the halogen source is selected from a halogen-containing plasma, a halogenated solvent and a halogen gas, and wherein the metal oxide layer is an electron transport layer (ETL) deposited during manufacture of a light emitting device (LED).
A method comprising converting a metal oxide layer to a halogen-doped metal oxide through exposure to a halogen source, wherein the halogen source is selected from a halogen-containing plasma, a halogenated solvent and a halogen gas, and wherein the halogen-doped metal oxide forms an electron transport layer (ETL) of a light emitting device (LED).
Dependencies are inferred from the claim text.