Radiation-emitting semiconductor chip and method for producing a radiation-emitting semiconductor chip

A method for producing a radiation-emitting semiconductor chip, wherein the method comprises:

• providing a semiconductor wafer comprising a first semiconductor wafer layer of a first doping type and a second semiconductor wafer layer of a second doping type;
• producing a first separation recess within the semiconductor wafer in a separation region completely penetrating the first semiconductor wafer layer;
• applying a first dielectric layer on the semiconductor wafer such that the first dielectric layer completely covers the semiconductor wafer in the separation region;
• applying a second dielectric layer on the semiconductor wafer such that the separation region is free of the second dielectric layer in a central region, wherein the second dielectric layer comprises a plurality of sublayers on a side surface of the semiconductor layer sequence and layer thicknesses of the sublayers are tapered in a border region in direction to an edge region;
• applying a third dielectric layer between the second dielectric layer and the semiconductor wafer, wherein the first dielectric layer is in direct contact with a top surface of the third dielectric layer in the edge region;
• and
• separating the semiconductor wafer through the central region into radiation emitting semiconductor chips.