Back-contact solar cell and photovoltaic module

A back-contact solar cell, comprising:

• a substrate having a front side and a back side that are arranged opposite to each other, wherein a first doped portion and a second doped portion are arranged alternately on the back side;
• a first doped functional layer located on the first doped portion, wherein the first doped functional layer comprises a first doped semiconductor sub-layer and at least one barrier layer that are sequentially stacked in a direction away from the substrate, a thickness of the at least one barrier layer is in a range of 0.5 nm to 3 nm, and the first doped semiconductor sub-layer comprises a first doping element, the first doped functional layer further comprising a second doped semiconductor sub-layer arranged on a side of the at least one barrier layer away from the substrate;
• a second doped semiconductor layer located on the second doped portion, wherein the second doped semiconductor layer comprises a second doping element having a conductivity type different from a conductivity type of the first doping element;
• a transparent conductive layer comprising a plurality of first conductive portions and a plurality of second conductive portions, wherein the plurality of first conductive portions are arranged on a side of the first doped functional layer away from the substrate, and the plurality of second conductive portions are arranged on a side of the second doped semiconductor layer away from the substrate;
• a first electrode arranged on a side of the first conductive portion away from the substrate;
• and
• a second electrode arranged on a side of the second conductive portion away from the substrate;
• wherein the at least one barrier layer is provided with a plurality of first holes, and a part of the first conductive portion is located in the plurality of first holes and is electrically connected to the first doped semiconductor sub-layer;
• and
• wherein the second doped semiconductor sub-layer is provided with a plurality of second holes, and the plurality of second holes are in communication with the plurality of first holes in one-to-one correspondence;
• wherein a part of the first conductive portion is located in the plurality of first holes and the plurality of second holes, and is electrically connected to the first doped semiconductor sub-layer.