Bifacial enhancement layers and photovoltaic devices including the same

A bifacial photovoltaic device comprising:

• an absorber layer having a front interface and a back interface, wherein the front interface has a front average quantum efficiency to light between 500 nm and 900 nm and the back interface has a back average quantum efficiency to light between 500 nm and 900 nm, and wherein the back average quantum efficiency is less than or equal to 50% of the front average quantum efficiency and greater than or equal to 5% of the front average quantum efficiency;
• and
• a bifacial enhancement layer over the absorber layer and positioned closer to the back interface of the absorber layer compared to the front interface of the absorber layer, wherein:
• the bifacial enhancement layer absorbs light having an absorbed wavelength less than or equal to a cutoff wavelength of an absorption edge of the bifacial enhancement layer;
• the cutoff wavelength corresponds to an absorbance equal to 15% of a maximum absorbance of the bifacial enhancement layer;
• the bifacial enhancement layer emits an emitted photoluminescence having a peak;
• a wavelength of the peak of the emitted photoluminescence of the bifacial enhancement layer is greater than the cutoff wavelength of the absorption edge;
• the peak of the photoluminescence of the bifacial enhancement layer has a full width at half maximum of less than 100 nm;
• and
• wherein the bifacial enhancement layer comprises quantum dots, and wherein the quantum dots comprise cadmium and tellurium.