Photodiode structure and manufacturing method thereof
AssigneeTaiwan-Asia Semiconductor Corporation
InventorChun-Chieh Lin
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Abstract
A manufacturing method of a photodiode structure includes the following steps: providing a substrate; performing an epitaxial process to form a first semiconductor layer on the substrate; performing an active area patterning and etching process to form a recessed portion on the first semiconductor layer; performing a first coating process to form a first anti-reflection layer on the first semiconductor layer; and performing an ion implantation process to pass through the first anti-reflection layer and form a second semiconductor layer in the recessed portion.
Claims11
A manufacturing method of a photodiode structure, comprising:
- providing a substrate;
- performing an epitaxial process to form a first semiconductor layer on the substrate;
- performing an active area patterning etching process to form a recessed portion on the first semiconductor layer;
- performing a first coating process to form a first anti-reflection layer on the first semiconductor layer;
- performing an ion implantation process to pass through the first anti-reflection layer and form a second semiconductor layer in the recessed portion;
- performing a second coating process to form a second anti-reflection layer on the first anti-reflection layer;
- performing a first metallization process to form a first electrode electrically connected to the substrate;
- and
- performing a second metallization process to form a second electrode electrically connected to the second semiconductor layer.
Dependencies are inferred from the claim text.