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US 12,765,087 B2Granted
Image sensing device
AssigneeSK hynix Inc.
InventorJae Hyung Jang
Life of this patent
Estimating the term…
Abstract
An image sensing device includes a substrate including a back side structured to receive incident light and a front side opposite to the back side; imaging pixels to receive the incident light from the back side and each imaging pixel structured to produce photocharge in response to received incident light; a plurality of conductive contact structures configured to generate a potential gradient in the substrate and to capture photocharges that are generated in response to the incident light and move by the potential gradient; and a well region disposed between the plurality of conductive contact structures.
Claims18
An image sensing device comprising:
- a substrate including a back side structured to receive incident light and a front side opposite to the back side;
- imaging pixels to receive the incident light from the back side and each imaging pixel structured to produce photocharge in response to received incident light;
- a plurality of conductive contact structures configured to generate a potential gradient in the substrate and to capture photocharges that are generated in response to the incident light and move by the potential gradient;
- and
- a well region disposed between the plurality of conductive contact structures,
- wherein each conductive contact structure includes:
- a control node doped with impurities of a first conductivity type in the substrate;
- a detection node doped with impurities of a second conductivity type different from the first conductivity type in the substrate;
- and
- a control gate including a gate electrode and a gate insulation layer for electrically isolating the gate electrode and the substrate from each other,
- wherein the well region is doped with impurities of the first conductivity type, and
- wherein the well region doped with impurities of the first conductivity type has a smaller doping density than the control node doped with impurities of the first conductivity type.
9 more elements
An image sensing device comprising:
- a substrate including a back side structured to receive incident light and a front side opposite to the back side;
- an imaging pixel to receive the incident light from the back side and structured to produce photocharge in response to the received incident light;
- a plurality of taps, each tap configured to generate a potential gradient in the substrate and to capture photocharges that are generated in response to the incident light and move by the potential gradient;
- and
- a well region disposed between the plurality of taps such that at least a portion of the well region overlaps with each of the plurality of taps,
- wherein each of the plurality of taps includes:
- a control node doped with impurities of a first conductivity type in the substrate;
- a detection node doped with impurities of a second conductivity type different from the first conductivity type in the substrate;
- and
- a control gate formed to include a gate electrode and a gate insulation layer for electrically isolating the gate electrode and the substrate from each other,
- wherein
- the control node, the detection node, and the control gate of a tap are sequentially arranged in a diagonal direction of a first pixel including the tap, and
- wherein the plurality of taps includes a first tap and a second tap that are included in the first pixel among the imaging pixels and receive different demodulation control signals.
10 more elements
An image sensing device comprising:
- a substrate including a back side structured to receive incident light and a front side opposite to the back side;
- a plurality of taps, each tap is configured to generate a potential gradient in the substrate and to capture photocharges that are generated in response to the incident light and move by the potential gradient;
- and
- a well region disposed between the plurality of taps,
- wherein each of the plurality of taps includes:
- a control node doped with impurities of a first conductivity type in the substrate;
- a detection node doped with impurities of a second conductivity type different from the first conductivity type in the substrate;
- and
- a control gate formed to include a gate electrode and a gate insulation layer for electrically isolating the gate electrode and the substrate from each other,
- wherein
- a depth of the well region from the front side is smaller than a depth of the control node from the front side,
- wherein the well region is doped with impurities of the first conductivity type, and
- wherein the well region doped with impurities of the first conductivity type has a smaller doping density than the control node doped with impurities of the first conductivity type.
10 more elements
Dependencies are inferred from the claim text.