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US 12,765,080 B2Granted
Photodiode and method of fabricating a photodiode
AssigneeFraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
InventorsPatrick Runge, Tobias Beckerwerth
Life of this patent
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Abstract
Provided is a photodiode, including a substrate formed by a III-V semiconductor material. The substrate is made of InP; at least one light absorption layer; and at least one doped contact layer. The absorption layer is to be illuminated through the contact layer. The contact layer includes a semiconductor material having an indirect band gap and has a thickness of at least 200 nm.
Claims20
A photodiode, comprising:
- a substrate formed by a III-V semiconductor material, wherein the substrate is made of InP;
- at least one light absorption layer;
- and
- at least one doped contact layer, wherein the absorption layer is to be illuminated through the contact layer, and
- wherein the contact layer comprises a semiconductor material having an indirect band gap and has a thickness of at least 200 nm.
2 more elements
A photodiode, comprising
- a substrate formed by a III-V semiconductor material, wherein the substrate is made of InP;
- at least one light absorption layer;
- at least one doped first contact layer, wherein the absorption layer is to be illuminated through the contact layer;
- a second contact layer doped complementary to the first contact layer and arranged on a side of the absorption layer facing away from the first contact layer;
- and
- at least one undoped and/or partially depleted collector layer arranged on the side of the absorption layer facing towards the second contact layer, wherein
- the first contact layer comprises a semiconductor material having an indirect band gap and has a thickness of at least 200 nm.
4 more elements
A method of fabricating a photodiode, comprising the steps of:
- providing a substrate formed by a III-V semiconductor material, wherein the substrate is made of InP;
- generating at least one light absorption layer on the substrate;
- and
- generating at least one doped contact layer on the substrate, wherein the absorption layer is to be illuminated through the contact layer,
- wherein the contact layer comprises a semiconductor material having an indirect band gap and has a thickness of at least 200 nm.
2 more elements
Dependencies are inferred from the claim text.