Integrated circuit and method of manufacturing
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTao-Yi Hung, Jam-Wem Lee, Kuo-Ji Chen, Wun-Jie Lin
Life of this patent
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Abstract
An integrated circuit (IC) device includes an antenna effect protection device, and a to-be-protected device. A first source/drain of the antenna effect protection device is electrically coupled to a first conductor configured to carry a reference voltage. A second source/drain of the antenna effect protection device is electrically coupled by a second conductor to a gate of the to-be-protected device. The antenna effect protection device is a bulk-less device.
Claims20
An integrated circuit (IC) device, comprising:
- an antenna effect protection device;
- and
- a to-be-protected device,
- wherein
- a first source/drain of the antenna effect protection device is electrically coupled to a first conductor configured to carry a reference voltage,
- a second source/drain of the antenna effect protection device is electrically coupled by a second conductor to a gate of the to-be-protected device, and
- the antenna effect protection device is a bulk-less device, and is configured to:
- in response to a reversed bias applied between the first source/drain and the second source/drain of the antenna effect protection device,
- discharge electric charges of a first polarity on the second conductor to the first conductor through a leakage current of the antenna effect protection device.
An integrated circuit (IC) device, comprising:
- a first power domain;
- a second power domain;
- a first antenna effect protection device in the first power domain;
- a second antenna effect protection device in the second power domain, wherein a gate of the second antenna effect protection device is electrically coupled to a source/drain of the first antenna effect protection device;
- and
- a first functional device in the second power domain,
- wherein a gate of the first functional device is electrically coupled to a source/drain of the second antenna effect protection device.
An integrated circuit (IC) device, comprising:
- a first transistor and a second transistor over a front side of an insulation layer;
- and
- a redistribution structure over the first transistor and the second transistor, and electrically coupling
- a first source/drain of the first transistor to a gate of the second transistor,
- wherein at least one of a bottom of a first source/drain of the second transistor or a bottom of a second source/drain of the second transistor is over and in direct contact with the front side of the insulation layer, and
- wherein the IC device further comprises:
- a conductive feed through via extending through the insulation layer, and electrically coupled to a second source/drain of the first transistor;
- and
- a semiconductor layer on a back side of the insulation layer, the semiconductor layer electrically coupled to the second source/drain of the first transistor through the feed through via.
Dependencies are inferred from the claim text.