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US 12,765,061 B2Granted
Driving substrates and display panels
AssigneeShenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
InventorXiaojun Zhan
Life of this patent
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Abstract
Embodiments of the present disclosure provide a driving substrate and a display panel, in which a transition part of an active layer is disposed between a first contact part and a channel of the active layer, a first part of a gate is disposed overlapping with the channel and used to block doped ions completely, a second part of the gate is disposed overlapping with the transition part and used to penetrate part of the doped ions; and a first electrode is connected to the first contact part, and a second electrode is connected to a second contact part.
Claims20
A driving substrate, comprising:
- a substrate;
- and
- a thin film transistor structure disposed on the substrate, wherein the thin film transistor structure comprises:
- an active layer disposed on the substrate and comprising a first contact part, a first transition part, a channel, and a second contact part, wherein the first transition part is disposed between the first contact part and the channel, and the second contact part is disposed at a side of the channel away from the first contact part;
- wherein a resistance value of the first contact part is less than a resistance value of the first transition part, and the resistance value of the first transition part is less than a resistance value of the channel;
- a gate insulation layer disposed on the active layer;
- a gate disposed on the gate insulation layer and comprising a first part and at least one second part connected to the first part, wherein the first part is disposed overlapping with the channel and used to block doped ions completely, and the second part is disposed overlapping with the first transition part and used to penetrate part of the doped ions;
- and
- a first electrode and a second electrode, wherein the first electrode is connected to the first contact part, and the second electrode is connected to the second contact part;
- wherein the gate comprises a first metal layer and a second metal layer stacked in a thickness direction of the driving substrate, the first metal layer is disposed on the gate insulation layer, and the second metal layer is disposed on a side of the first metal layer away from the gate insulation layer;
- the first metal layer is disposed overlapping with the channel, the second metal layer covers both the channel and the first transition part, the first part consists of a portion of the second metal layer covering the channel and the first metal layer, and the second part consists of a portion of the second metal layer covering the first transition part.
8 more elements
A display panel, comprising a driving substrate and a light emitting device disposed on the driving substrate, wherein the driving substrate comprises:
- a substrate;
- and
- a thin film transistor structure disposed on the substrate, wherein the thin film transistor structure comprises:
- an active layer disposed on the substrate and comprising a first contact part, a first transition part, a channel, and a second contact part, wherein the first transition part is disposed between the first contact part and the channel, and the second contact part is disposed at a side of the channel away from the first contact part;
- wherein a resistance value of the first contact part is less than a resistance value of the first transition part, and the resistance value of the first transition part is less than a resistance value of the channel;
- a gate insulation layer disposed on the active layer;
- a gate disposed on the gate insulation layer and comprising a first part and a second part connected to the first part, wherein the first part is disposed overlapping with the channel and used to block doped ions completely, and the second part is disposed overlapping with the first transition part and used to penetrate part of the doped ions;
- and
- a first electrode and a second electrode, wherein the first electrode is connected to the first contact part, and the second electrode is connected to the second contact part;
- wherein the gate comprises a first metal layer and a second metal layer stacked in a thickness direction of the driving substrate, the first metal layer is disposed on the gate insulation layer, and the second metal layer is disposed on a side of the first metal layer away from the gate insulation layer;
- the first metal layer is disposed overlapping with the channel, the second metal layer covers both the channel and the first transition part, the first part consists of a portion of the second metal layer covering the channel and the first metal layer, and the second part consists of a portion of the second metal layer covering the first transition part.
8 more elements
Dependencies are inferred from the claim text.