A semiconductor device, comprising:
- a semiconductor layer;
- an insulation film formed on a surface of the semiconductor layer;
- a main cell region including a main cell disposed on the semiconductor layer;
- and
- a temperature sensing diode disposed in a region different from the main cell region and configured to detect a temperature, wherein
- the temperature sensing diode includes a diode cell including a first semiconductor region of a first conductive type formed as a thin film on a surface of the insulation film and a second semiconductor region of a second conductive type formed as a thin film on the surface of the insulation film,
- the second semiconductor region annularly surrounds the first semiconductor region,
- the second semiconductor region includes an inner surface joined to the first semiconductor region,
- the temperature sensing diode includes multiple diode cells arranged in one direction and connected in series to each other,
- the multiple diode cells include a first diode cell and a second diode cell that are adjacent to each other in an arrangement direction of the multiple diode cells,
- the semiconductor device further comprises:
- an intermediate insulation film covering the temperature sensing diode;
- a first interconnect formed on a surface of the intermediate insulation film and connected to the first semiconductor region of the first diode cell;
- and
- a second interconnect formed on the surface of the intermediate insulation film and insulated from the first interconnect,
- the second interconnect electrically connects the second semiconductor region of the first diode cell and the first semiconductor region of the second diode cell,
- the temperature sensing diode is mounted on a diode mount,
- a first interconnect lead region and a second interconnect lead region are disposed on opposite end portions of the diode mount in the arrangement direction,
- the multiple diode cells include a first end cell and a second end cell disposed at opposite ends in the arrangement direction,
- the first end cell is disposed toward the second interconnect lead region,
- the second end cell is disposed toward the first interconnect lead region,
- the semiconductor device further comprises:
- a first end interconnect formed on a surface of the intermediate insulation film, the first end interconnect including a first end connector disposed to overlap the first semiconductor region of the first end cell and a first end extension extending from the first end connector to an outside of the first semiconductor region of the first end cell as viewed in the thickness-wise direction of the semiconductor layer, the first end extension including a first electrode of the temperature sensing diode;
- a first connection line connected to the first end extension and extending through the first interconnect lead region;
- a second end interconnect formed on the surface of the intermediate insulation film, the second end interconnect including a second end connector disposed to overlap the first semiconductor region of the second end cell and a second end extension extending from the second end connector to an outside of the first semiconductor region of the second end cell as viewed in the thickness-wise direction of the semiconductor layer, the second end extension including a second electrode of the temperature sensing diode;
- and
- a second connection line connected to the second end extension and extending through the second interconnect lead region.