Polar semiconductor superlattice with energy barrier

A semiconductor structure comprising:

• a superlattice comprising repeating unit cells, wherein each unit cell comprises a narrow bandgap (NBG) layer comprising an NBG polar semiconductor material, and a wide bandgap (WBG) layer comprising a WBG polar semiconductor material;
• and
• an energy barrier region in contact with the superlattice, the energy barrier region comprising a total of N layers, wherein N is an even number greater than or equal to 4, half of the N layers comprise the WBG polar semiconductor material, half of the N layers comprise the NBG polar semiconductor material, the layers of the N layers comprising the WBG polar semiconductor material alternate with the layers of the N layers comprising the NBG polar semiconductor material, and a total thickness of the energy barrier region is equal to a thickness of N/2 unit cells of the superlattice;
• wherein a first energy barrier layer of the N layers of the energy barrier region that comprises the NBG polar semiconductor material is thicker than the NBG layer of the unit cell of the superlattice, and a second energy barrier layer of the N layers of the energy barrier region that comprises the NBG polar semiconductor material is thinner than the NBG layer of the unit cell of the superlattice.

A semiconductor structure comprising:

• a superlattice comprising repeating unit cells, wherein each unit cell comprises a narrow bandgap (NBG) layer comprising an NBG polar semiconductor material, and a wide bandgap (WBG) layer comprising a WBG polar semiconductor material;
• and
• an energy barrier region in contact with the superlattice, wherein the energy barrier region comprises:
• a total of N layers, wherein Nis an even number greater than 4, half of the N layers comprise the WBG polar semiconductor material, half of the N layers comprise the NBG polar semiconductor material, and the layers of the N layers comprising the WBG polar semiconductor material alternate with the layers of the N layers comprising the NBG polar semiconductor material;
• a total thickness equal to a thickness of N/2 unit cells of the superlattice;
• a first energy barrier region bilayer comprising two adjacent layers of the N layers, wherein a thickness of the first energy barrier region bilayer is greater than thickness of the unit cell of the superlattice;
• and
• a second energy barrier region bilayer comprising two adjacent layers of the N layers, wherein a thickness of the second energy barrier region bilayer is less than thickness of the unit cell of the superlattice.