Fin field effect transistor (FinFET) device and method for forming the same

A fin field effect transistor (FinFET) device structure comprising:

• an epitaxial source/drain region located over a semiconductor substrate, the epitaxial source/drain region comprising a first surface, the first surface being substantially flat and extending along a first direction;
• and
• a semiconductor fin extending between the epitaxial source/drain region and the semiconductor substrate and through a dielectric material, the semiconductor fin interfacing with the dielectric material, the epitaxial source/drain region having a first width greater than a second width of the semiconductor fin, the semiconductor fin comprising a second surface, wherein a line extending in a second direction through at least two points on the second surface is parallel with a major surface of the semiconductor substrate, and wherein the first direction and the second direction intersect at a first angle θ1, the first angle θ1 facing the epitaxial source/drain region being between about 90° and about 175°.