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US 12,764,972 B2Granted
Memory device and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Hsien Wu, Chen-Feng Hsu, Chien-Min Lee, Tung-Ying Lee, Xinyu Bao, Elia Ambrosi, Hengyuan Lee
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Abstract
A memory device includes a substrate, a bottom electrode disposed over the substrate, a memory layer disposed over the bottom electrode, a selector layer disposed over the memory layer, and a top electrode disposed over the selector layer. The selector layer is an oxygen-doped chalcogenide based film, and an oxygen content of the selector layer is about 10 at % or less.
Claims20
A memory device, comprising:
- a substrate;
- a bottom electrode disposed over the substrate;
- a memory layer disposed over the bottom electrode;
- a selector layer disposed over the memory layer;
- and
- a top electrode disposed over the selector layer,
- wherein the selector layer is an oxygen-doped chalcogenide based film, and an oxygen content of the selector layer is about 10 at % or less, and
- wherein the oxygen content of the selector layer is varied in a thickness direction extending between the bottom electrode and the top electrode.
5 more elements
A memory device, comprising:
- a substrate;
- a bottom electrode disposed over the substrate;
- a top electrode disposed over the bottom electrode;
- and
- a selector layer and a phase change layer provided between the bottom electrode and the top electrode,
- wherein the selector layer comprises at least one first layer and at least one second layer in direct contact with each other, and an oxygen content of the at least one first layer is less than an oxygen content of the at least one second layer, wherein the oxygen content of the at least one first layer is less than about 0.1 at %.
3 more elements
A method of forming a memory device, comprising:
- providing a substrate;
- forming a bottom electrode over the substrate;
- forming a memory layer over the bottom electrode;
- forming a selector layer over the memory layer;
- and
- forming a top electrode over the selector layer,
- wherein the selector layer is an oxygen-doped chalcogenide based film, and an oxygen content of the selector layer is about 10 at % or less, and
- wherein the oxygen content of the selector layer is varied in a thickness direction extending between the bottom electrode and the top electrode.
5 more elements
Dependencies are inferred from the claim text.