Semiconductor device including alternately arranged memory cells having reversed stacking orders and method for fabricating the same

A method for fabricating a semiconductor device comprising:

• forming first conductive lines extending in a first direction over a substrate;
• forming a first memory layer over the first conductive lines;
• forming, over the first memory layer, a first spacer layer extending in a third direction having a first angle tilted with respect to a second direction crossing the first direction;
• forming, over the first spacer layer, a second spacer layer extending in a fourth direction crossing the third direction;
• etching the first memory layer using a spacer pattern including a stacked structure of the first spacer layer and the second spacer layer as an etch barrier to form a first memory layer pattern over a first portion of each of the first conductive lines;
• conformally forming a selector layer to cover a top surface and sidewalls of the first memory layer pattern and have a hole disposed between adjacent first memory layers to be spaced apart from a top surface of a second portion of each of the first conductive lines;
• filling the hole with a second memory layer to form a second memory layer pattern;
• and
• forming second conductive lines extending in the second direction over the second memory layer pattern.