Semiconductor device based on dielectric material containing metal interstitial impurity

A semiconductor device based on a dielectric material containing a metal interstitial impurity, comprising:

• a substrate, a dielectric material layer, and a functional layer;
• wherein a material for preparing the dielectric material layer is a compound containing the metal interstitial impurity;
• wherein the dielectric material layer and/or the functional layer is configured to subject to at least one of electricity, heat, light or magnetism, such that the dielectric material layer reaches a crystallization temperature to transit from a first state to a second state;
• and
• wherein the metal interstitial impurity is in a lattice interstice of the dielectric material in a crystalline state.