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US 12,764,955 B2Granted
Three-dimensional memory devices and methods for forming the same
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsCuicui Kong, Kun Zhang, Yuhui Han, Linchun Wu, Shuangshuang Wu, Zhiliang Xia, Zongliang Huo, Jingtao Xie, Bingjie Yan, Di Wang, Wenxi Zhou
Life of this patent
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Abstract
In certain aspects, a three-dimensional (3D) memory device includes channel structures in a first region, word line pick-up structures in a second region, and word lines each extending from the first region into at least a portion of the second region. At least one word line pick-up structure includes multiple sections each electrically connected to a different word line.
Claims19
A three-dimensional (3D) memory device, comprising:
- a plurality of channel structures in a first region;
- a plurality of word line pick-up structures in a second region;
- and
- a plurality of word lines each extending from the first region into at least a portion of the second region,
- wherein one word line pick-up structure of the plurality of word line pick-up structures comprises multiple sections each electrically connected to a single word line, and
- the multiple sections of the one word line pick-up structure are separated from each other by first and second slit structures, the first slit structure extending in a first direction within a plane perpendicular to a depth direction of the one word line pick-up structure, the second slit structure extending in a second direction within the plane, the second direction being perpendicular to the first direction, and the first and second slit structures extending in the depth direction of the one word line pick-up structure.
3 more elements
A system, comprising:
- a three-dimensional (3D) memory device configured to store data, the 3D memory device comprising:
- a plurality of channel structures in a first region;
- a plurality of word line pick-up structures in a second region;
- and
- a plurality of word lines each extending from the first region into at least a portion of the second region,
- wherein one word line pick-up structure of the plurality of word line pick-up structures comprises multiple sections each electrically connected to a single word line, and
- the multiple sections of the one word line pick-up structure are separated from each other by first and second slit structures, the first slit structure extending in a first direction within a plane perpendicular to a depth direction of the one word line pick-up structure, the second slit structure extending in a second direction within the plane, the second direction being perpendicular to the first direction, and the first and second slit structures extending in the depth direction of the one word line pick-up structure;
- and
- a memory controller electrically connected to the 3D memory device and configured to operate the channel structures through the word lines.
6 more elements
Dependencies are inferred from the claim text.