Semiconductor device and method of manufacturing semiconductor device
AssigneeSK hynix Inc.
InventorsHee Do Na, Hee Soo Kim, Yoon Soo Oh, Chang Soo Lee, Chul Young Ham
Life of this patent
Estimating the term…
Abstract
A semiconductor device may include a gate structure including insulating layers and conductive layers alternately stacked, a channel layer passing through the gate structure, an insulating core disposed in the channel layer, and a capping layer including a capping pattern disposed in the channel layer and a capping liner disposed between the capping pattern and the insulating core and extending between the channel layer and the capping pattern, wherein the capping liner and the capping pattern may include impurities having different concentrations.
Claims13
A method of manufacturing a semiconductor device, the method comprising:
- forming a stack including first material layers and second material layers alternately stacked;
- forming a first opening in the stack;
- forming a preliminary channel layer in the first opening;
- forming a preliminary insulating core in the preliminary channel layer;
- forming a second opening by etching the preliminary insulating core;
- forming a preliminary capping liner in the second opening;
- partially etching the preliminary capping liner;
- and
- forming a preliminary capping pattern including an impurity of a concentration different from that of the preliminary capping liner, in the second opening.
Dependencies are inferred from the claim text.