Staircase connection structure for three-dimensional memory devices

Abstract

A memory device can include channel structures in a first region. The memory device can also include a plurality of word line cavity structures in a second region abutting the first region. The plurality of word line cavity structures can extend along a first direction. Each of the word line cavity structures can include a first contact structure in a first side of the word line cavity structure along a second direction perpendicular to the first direction. Each of the word line cavity structures can also include a second contact structure in a second side of the word line cavity structure along the second direction. The second side can be opposite to the first side. Each of the word line cavity structures can further include a slit structure. The first contact structure and the second contact structure can be separated with the slit structure along the second direction.

Dependencies are inferred from the claim text.