Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsYirang Lim, Jinsu Lee, Jungwoo Kang, Junrak Choi, Yaejin Hong
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Abstract
A semiconductor device includes a conductive pattern, and a capacitor electrically connected to the conductive pattern. The capacitor includes a first electrode structure electrically connected to the conductive pattern, a dielectric layer disposed on the first electrode structure, a second electrode structure disposed on the dielectric layer, and a plate electrode disposed on the second electrode structure. The second electrode structure includes a first electrode material layer including a first metal element and a nitrogen element, and a first protective material layer including a second metal element, a Group 14 element, and an oxygen element.
Claims20
A semiconductor device comprising:
- a conductive pattern;
- and
- a capacitor electrically connected to the conductive pattern,
- wherein the capacitor comprises:
- a first electrode structure electrically connected to the conductive pattern;
- a dielectric layer disposed on the first electrode structure;
- a second electrode structure disposed on the dielectric layer;
- and
- a plate electrode disposed on the second electrode structure,
- wherein the second electrode structure comprises:
- a first electrode material layer including a first metal element and a nitrogen element;
- and
- a first protective material layer including a second metal element, a Group 14 element, and an oxygen element,
- wherein the first metal element and the second metal element are a same element.
A semiconductor device comprising:
- a conductive pattern;
- and
- a capacitor electrically connected to the conductive pattern,
- wherein the capacitor comprises:
- a first electrode structure electrically connected to the conductive pattern;
- a dielectric layer disposed on the first electrode structure;
- a second electrode structure disposed on the dielectric layer;
- and
- a plate electrode disposed on the second electrode structure,
- wherein the second electrode structure comprises:
- at least one electrode material layer;
- and
- at least one protective material layer,
- wherein a thickness of the at least one electrode material layer is greater than a thickness of the at least one protective material layer,
- wherein the at least one electrode material layer and the at least one protective material layer include a same metal element,
- wherein the at least one electrode material layer further includes a nitrogen element, and
- wherein the at least one protective material layer further includes a silicon element and an oxygen element.
A semiconductor device comprising:
- a conductive pattern;
- and
- a capacitor electrically connected to the conductive pattern,
- wherein the capacitor comprises:
- a first electrode structure electrically connected to the conductive pattern;
- a dielectric layer disposed on the first electrode structure;
- a second electrode structure disposed on the dielectric layer;
- and
- a plate electrode disposed on the second electrode structure,
- wherein the second electrode structure comprises:
- at least one electrode material layer;
- and
- at least one protective material layer,
- wherein the first electrode structure has a pillar shape extending in a direction,
- perpendicular to an upper surface of the conductive pattern,
- wherein the dielectric layer is disposed adjacent the first electrode structure, and between the first electrode structure and the second electrode structure,
- wherein a thickness of the at least one electrode material layer is greater than a thickness of the at least one protective material layer,
- wherein the at least one electrode material layer includes a first material,
- wherein the at least one protective material layer includes at least one of a second material and a third material,
- wherein the first material is a metal nitride including a metal element and a nitrogen element,
- wherein the second material includes a metal element, a silicon element, and an oxygen element,
- wherein the third material includes a metal element, a silicon element, an oxygen element, and a nitrogen element, and
- wherein the at least one electrode material layer is spaced apart from the dielectric layer by the at least one protective material layer.
Dependencies are inferred from the claim text.