US 12,764,931 B2Granted

Semiconductor memory device including gate insulating pattern including high-k dielectric material

AssigneeSamsung Electronics Co., Ltd.

InventorsSangho Lee, Moonyoung Jeong, Ilgweon Kim, Yoongi Hong

Life of this patent

Estimating the term…

Loading patent…

Abstract

A semiconductor memory device includes a bit line, first and second word lines spaced apart from each other on the bit line, a back gate electrode between the first and second word lines, a first active pattern between the first word line and the back gate electrode, a second active pattern between the second word line and the back gate electrode, contact patterns connected to the first and second active patterns, respectively, and a first gate insulating pattern between the first active pattern and the first word line and between the second active pattern and the second word line. A top surface of the first gate insulating pattern is located at substantially a same height as top surfaces of the first and second word lines. The first gate insulating pattern includes a high-k dielectric material.

Claims20

Dependent claims

A semiconductor memory device comprising:

a bit line extending in a first direction;
a first word line and a second word line which extend in a second direction intersecting the first direction on the bit line, and the first word line and the second word line are spaced apart from each other in the first direction;
a back gate electrode extending in the second direction between the first word line and the second word line;
a first active pattern between the first word line and the back gate electrode;
a second active pattern between the second word line and the back gate electrode;
contact patterns connected to the first active pattern and the second active pattern, respectively;
and
a first gate insulating pattern between the first active pattern and the first word line and between the second active pattern and the second word line,
wherein a top surface of the first gate insulating pattern is located at substantially a same height as a top surface of the first word line and a top surface of the second word line, and
wherein the first gate insulating pattern includes a high-k dielectric material.

7 more elements

Dependencies are inferred from the claim text.