Solid-state imaging element and electronic device including a shared structure for pixels for sharing an AD converter

An electronic device, comprising:

• a light detecting device including:
• a first pixel unit that includes:
• a first photodiode;
• a first transfer transistor coupled to the first photodiode;
• a first amplification transistor having a gate terminal coupled to the first transfer transistor;
• and
• a first selection transistor coupled to the first amplification transistor;
• a second pixel unit that includes:
• a second photodiode;
• a second transfer transistor coupled to the second photodiode;
• a second amplification transistor having a gate terminal coupled to the second transfer transistor;
• and
• a second selection transistor coupled to the second amplification transistor;
• and
• an analog to digital (AD) converter that includes a first metal oxide semiconductor (MOS) transistor to which a reference signal is input, wherein
• the first pixel unit and the second pixel unit share the AD converter,
• each of the first transfer transistor and the second transfer transistor is configured to enter into an ON state at a first timing,
• the first selection transistor is configured to enter into the ON state at a second timing,
• the second selection transistor is configured to enter into the state at a third timing, and
• the AD converter further includes:
• a comparator;
• a second MOS transistor;
• a third MOS transistor;
• and
• a fourth MOS transistor, wherein
• the first pixel unit and the second pixel unit are connected in parallel between a drain of the second MOS transistor and a drain of the fourth MOS transistor, and
• a connecting point of the first pixel unit and the second pixel unit, and the drain of the fourth MOS transistor, is connected to an input terminal of the comparator.