Thin-film substrate and energy-sensitive electronic component including same

An energy-sensitive electronic component, comprising:

• an Al2O3 single crystal base substrate;
• a VO2 functional thin film disposed on the Al2O3 single crystal base substrate and doped with Ti;
• and
• a first outer electrode and a second outer electrode disposed to be spaced apart from each other on the Al2O3 single crystal base substrate and/or the VO2 functional thin film and connected to the VO2 functional thin film,
• wherein, when R1 is a resistance at a temperature of 25° C. and R2 is a resistance at a temperature of 80° C., the VO2 functional thin film has an R1/R2 of 104 or more, and when a heating process from 25° C. to 80° C. and a cooling process from 80° C. to 25° C. are referred to as one cycle, the VO2 functional thin film satisfies all of a) a variation (VΔT) in hysteresis temperature difference (ΔT) during 10 cycles is 1° C. or lower, b) a variation (VTMI) in phase transition temperature (TMI) during 10 cycles is 1.5° C. or lower, and c) a variation rate (VR1/R2) of R1/R2 during 10 cycles is 5% or less.