Memory device, memory system, and operating method of memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsTongsung Kim, Seonkyoo Lee, Younggyu Lee, Taesung Lee
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AssigneeSamsung Electronics Co., Ltd.
InventorsTongsung Kim, Seonkyoo Lee, Younggyu Lee, Taesung Lee
Estimating the term…
Provided is a memory device including a first pad configured to receive a read enable signal from a memory controller, a second pad configured to receive a read duty cycle correct command signal from the memory controller, a first duty correction circuit configured to perform a read duty cycle correct operation, based on the read duty cycle correct command signal received from the memory controller, when the read enable signal is received, and output a data strobe signal generated based on the read duty cycle correct operation, and a second duty correction circuit configured to receive the data strobe signal from the first duty correction circuit, generate first to fourth clock signals having different phases from each other based on the data strobe signal, and perform a write duty cycle correct operation to correct a duty cycle for the first clock signal and the third clock signal which have a phase difference of 180° and to correct a duty cycle for the second clock signal and the fourth clock signal which have a phase difference of 180°, wherein the read duty cycle correct operation and the write duty cycle correct operation are performed simultaneously.
A memory device comprising:
An operating method of a memory device, the operating method comprising:
A memory system comprising:
Dependencies are inferred from the claim text.