Read/write circuits for multi-story cross-point memory

A method, comprising:

• receiving a first address of a first selected nonvolatile memory cell at an intersection of a first word line and a first bit line in a nonvolatile memory cell structure;
• determining that the first selected nonvolatile memory cell is in a first story;
• in response to determining that the first selected nonvolatile memory cell is in the first story, connecting a sense amplifier to the first bit line to read the first selected nonvolatile memory cell;
• reading the first selected nonvolatile memory cell by passing a first current through the first word line, the first selected nonvolatile memory cell, the first bit line and a current mirror while the sense amplifier senses the first selected nonvolatile memory cell by comparing a sense voltage between the first bit line and the current mirror with a reference voltage;
• receiving a second address of a second selected nonvolatile memory cell at an intersection of the first bit line and a second word line in the nonvolatile memory cell structure;
• determining that the second selected nonvolatile memory cell is in a second story;
• in response to determining that the second selected nonvolatile memory cell is in the second story, connecting the sense amplifier to the second word line to read the second selected nonvolatile memory cell.