Storage device, electronic apparatus, and method for manufacturing storage device

Abstract

A storage device (1) according to an aspect of the present disclosure includes: a storage element and a reference element each having a fixed layer whose magnetization direction is fixed, a storage layer whose magnetization direction is changeable, and an insulating layer provided between the fixed layer and the storage layer; a base layer (for example, a lower insulating layer 32) provided with the storage element and the reference element; and a semiconductor substrate (200) having a surface (200a) on which the base layer is laminated, in which the base layer has a first inclined surface (M2) inclined with respect to the surface (200a), and a second inclined surface inclined with respect to a plane (M1) parallel to the surface (200a) or the surface (200a) at an inclination angle smaller than an inclination angle of the first inclined surface (M2), the storage element is provided on the first inclined surface (M2), and the reference element is provided on the plane (M1) or the second inclined surface.

Dependencies are inferred from the claim text.