Enhancing lithography operation for manufacturing semiconductor devices

A method of treatment of a reticle, comprising:

• applying ozone fluid over a surface of the reticle;
• while the ozone fluid is over the surface of the reticle, irradiating the surface of the reticle by an incident ultraviolet (UV) beam for an irradiation time to decompose a contamination layer on the surface of the reticle;
• directing a reflected UV beam from the surface of the reticle to a detector to generate a detected signal;
• and
• controlling irradiation of the UV beam based on the detected signal.

A treatment device, comprising:

• a controller;
• a reticle stage for mounting a reticle;
• an ultraviolet (UV) light source;
• and
• an ozone fluid supplier,
• wherein the controller is configured to:
• command the UV light source to turn on and to irradiate UV radiation from the UV light source, a surface of the reticle mounted on the reticle stage,
• command the ozone fluid supplier to release an ozone fluid to treat the surface of the reticle during the irradiation with the UV radiation,
• adjust an irradiation time of the UV radiation based on a reflected UV beam from the surface of the reticle, and
• command the reticle stage to move such that an entire surface of the reticle is subjected to the UV radiation and the ozone fluid.