Metal containing photoresist developer composition, and method of forming patterns including step of developing using the composition

A developer composition, the developer composition comprising:

• an organic solvent, and
• at least one additive selected from methyl phosphonic acid, ethyl phosphonic acid, butyl phosphonic acid, hexyl phosphonic acid, n-octyl phosphonic acid, tetradecyl phosphonic acid, octadecyl phosphonic acid, vinyl phosphonic acid, aminomethyl phosphonic acid, methylene diamine tetramethylene phosphonic acid, ethylene diamine tetramethylene phosphonic acid, 1-amino 1-phosphonooctyl phosphonic acid, etidronic acid, 2-aminoethyl phosphonic acid, 3-aminopropyl phosphonic acid, 6-hydroxyl hexyl phosphonic acid, decyl phosphonic acid, methylene diphosphonic acid, nitrilotrimethylene triphosphonic acid, 1H, 1H,2H,2H-perfluorooctanephosphonic acid, diphenylphosphinic acid, bis(4-methoxyphenyl) phosphinic acid, bis(hydroxymethyl) phosphinic acid, p-(3-aminopropyl)-p-butylphosphinic acid, vinylsulfonic acid, 2-propene-1-sulfonic acid, propanesulfonic acid, 3-hydroxypropane-1-sulfonic acid, 4-hydroxybenzenesulfonic acid, p-toluenesulfonic acid, and combinations thereof,
• wherein the additive is in an amount of about 0.0001 wt % to less than about 1.0 wt % based on the total weight of the developer composition.