Method of manufacturing photomask, and method of manufacturing semiconductor device using the same

A method of manufacturing a photomask, the method comprising:

• preparing a mask blank comprising a substrate, a reflective layer on the substrate, and a light absorbing layer on the reflective layer, wherein the reflective layer is configured to reflect extreme ultraviolet (EUV) light;
• etching the light absorbing layer to form a photomask comprising a plurality of pattern elements, wherein the plurality of pattern elements include correction-target pattern elements having a critical dimension (CD) deviation from a target CD;
• identifying a correction-target region in which the correction-target pattern elements are located in the photomask, and acquiring local CD correction information including position and CD deviations of the correction-target pattern elements;
• directing a laser beam to a mirror array of a digital micromirror device (DMD), wherein the mirror array comprises mirrors arranged in a plurality of rows and a plurality of columns;
• converting the laser beam into a beam pattern array corresponding to the mirror array by controlling on/off switching of each of the mirrors based on the local CD correction information, wherein the beam pattern array has a beam pattern arranged in a position corresponding to on-state mirrors in the mirror array;
• forming a linear beam by focusing the beam pattern array through an optical system;
• and
• performing CD correction of the photomask by applying a chemical liquid to the photomask and scanning the linear beam over the photomask to irradiate the photomask.

A method of manufacturing a semiconductor device, comprising:

• forming a photoresist film on a wafer comprising a feature layer;
• preparing a photomask comprising a substrate, a reflective layer on the substrate, and a light absorbing layer on the reflective layer, wherein the reflective layer is configured to reflect extreme ultraviolet (EUV) light, and wherein the light absorbing layer comprises a plurality of pattern elements, wherein the plurality of pattern elements include correction-target pattern elements having a critical dimension (CD) deviation from a target CD;
• correcting critical dimensions of the correction-target pattern elements by applying a chemical liquid to the photomask and irradiating a region in which the correction-target pattern elements are located with a laser beam resulting in a corrected photomask;
• forming a photoresist pattern by exposing and developing the photoresist film using the corrected photomask;
• and
• processing the feature layer using the photoresist pattern, wherein the correcting of the critical dimensions of the correction-target pattern elements comprises:
• acquiring local CD correction information including position and CD deviations of the correction-target pattern elements in the photomask;
• directing a laser beam to a mirror array of a digital micromirror device (DMD), wherein the mirror array has mirrors arranged in a plurality of rows and a plurality of columns;
• converting the laser beam into a beam pattern array corresponding to the mirror array by controlling on/off switching of each of the mirrors in the mirror array based on the local CD correction information;
• forming a linear beam by focusing the beam pattern array through an optical system;
• and
• performing CD correction over a desired area of the photomask by applying an etchant to the photomask and scanning the linear beam over the photomask to irradiate the photomask.