Dissection method for optical proximity correction and patterning method

A dissection method for optical proximity correction, comprising:

• providing a layout pattern;
• performing an initial dissection to define each side of the layout pattern as an original segment so as to form a plurality of original segments;
• performing an corner opposite dissection, wherein the corner opposite dissection comprises taking one side from the sides as a target side, and judging whether the corner opposite dissection is performed to the original segment corresponding to the target side according to a first included angle relationship, so as to form a plurality of intermediate segments or remain the original segment corresponding to the target side, wherein the first included angle relationship comprises an included angle based on an opposite side of the target side and its adjacent side or an included angle based on the target side itself and its adjacent side;
• performing a symmetrical dissection, wherein the symmetrical dissection comprises dividing a target segment into a plurality of sub-segments symmetrical to each other according to a second included angle relationship, wherein the target segment comprises one of the plurality of intermediate segments or one of the plurality of original segments;
• performing optical proximity correction to a plurality of sub-blocks and a plurality of corner blocks formed by the corner opposite dissection and the symmetrical dissection to form a plurality of optical proximity correction patterns;
• and
• transferring the plurality of optical proximity correction patterns to a photomask.

A patterning method, comprising:

• providing a layout pattern;
• dissecting the layout pattern, comprising:
• performing a corner opposite dissection to divide the layout pattern into a plurality of corner blocks and a plurality of non-corner blocks;
• and
• performing a symmetrical dissection to divide the plurality of non-corner blocks into a plurality of sub-blocks;
• performing optical proximity correction to the plurality of sub-blocks and the plurality of corner blocks to form a plurality of optical proximity correction patterns;
• transferring the plurality of optical proximity correction patterns to a photomask;
• performing a lithography process by using the photomask as a mask, so as to form mask patterns in a mask layer on a substrate;
• and
• performing an etching process to transfer the mask patterns to a material layer between the substrate and the mask layer.