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US 12,760,445 B2Granted
Nitrogen-doped polycrystalline SiC film having an average grain size of 0.5 to 5 .mu.M and method for producing the same by performing CVD on a heated base material
AssigneeTokai Carbon Co., Ltd.
InventorsTakuji Iida, Hiroyuki Jindo, Shohei Oishi, Ikuya Takahashi, Yuji Ushijima, Reiko Yashikida
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Abstract
The present invention addresses the problem of providing: a polycrystalline SiC molded article that has a small volume resistivity despite having a small crystal grain size; and a method for producing the same. The present invention provides a polycrystalline SiC molded body in which the average crystal grain size of 5 μm or less, a nitrogen concentration of 2.7×1019 to 5.4×1020 (pcs./cm3), and the product of the carrier density×Hall mobility of 4.0×1020 to 6.0×1021 (pcs./cmVsec).
Claims6
A polycrystalline SiC film having
- an average crystal grain size of 0.5 to 5 μm,
- a nitrogen concentration of 2.7×1019 to 5.4×1020 (atoms/cm3), and
- a product of carrier density×Hall mobility of 4.0×1020 to 6.0×1021 (atoms/cmVsec).
Dependencies are inferred from the claim text.