Back to results
US 12,760,414 B2Granted
Method for an amorphous boron nitride layer and associated amorphous boron nitride layers
AssigneeASM IP Holding B.V.
InventorsGaurav Pathak, Mikko Ruoho, Viljami J. Pore, Ming Liu
Life of this patent
Estimating the term…
Abstract
Methods for depositing amorphous boron nitride layers on a substrate are provided. Exemplary methods include providing a boron precursor to a reaction chamber and providing nitrogen reactive species to the reaction chamber.
Claims20
A method for forming an amorphous boron nitride layer, the method comprising:
- seating a non-planar substrate within a reaction chamber;
- and
- depositing the amorphous boron nitride layer on the non-planar substrate by performing one or more deposition cycles of a plasma enhanced atomic layer deposition (PEALD) process, wherein a unit deposition cycle of the PEALD process comprises:
- contacting the non-planar substrate with a vapor phase reactant comprising a boron precursor;
- and
- contacting the non-planar substrate with one or more reactive species generated from a plasma produced from a gas selected from the group consisting of hydrogen (H2), nitrogen (N2), ammonia (NH3), and mixtures thereof,
- wherein the one or more reactive species react with the boron precursor to form the amorphous boron nitride layer, and
- wherein the amorphous boron nitride layer is deposited conformally with a step coverage greater than 90%.
5 more elements
A method for forming an amorphous boron nitride layer, the method comprising:
- seating a substrate within a reaction chamber;
- and
- depositing the amorphous boron nitride layer on the substrate by performing one or more deposition cycles of a plasma enhanced atomic layer deposition (PEALD) process, wherein a unit deposition cycle of the PEALD process comprises:
- contacting the substrate with a vapor phase reactant comprising a boron triiodide (BI3) precursor;
- and
- contacting the substrate with one or more nitrogen reactive species generated from a gas consisting essentially of nitrogen (N2) and hydrogen (H2), wherein the one or more nitrogen reactive species react with the boron triiodide (BI3) precursor to form the amorphous boron nitride laver.
3 more elements
A method for forming an amorphous boron nitride layer, the method comprising:
- seating a substrate within a reaction chamber;
- and
- depositing the amorphous boron nitride layer on the substrate by performing one or more deposition cycles of a plasma enhanced atomic layer deposition (PEALD) process, wherein a unit deposition cycle of the PEALD process comprises:
- heating the substrate to a temperature between 150° C. and 300° C.:
- contacting the substrate with a vapor phase reactant comprising boron triiodide (BI3);
- and
- contacting the substrate with one or more reactive species generated from a plasma produced from a gas consisting essentially of nitrogen (N2), and hydrogen (H2), wherein the one or more reactive species react with the boron triiodide (BI3) to form the amorphous boron nitride layer.
4 more elements
Dependencies are inferred from the claim text.