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US 12,760,223 B2Granted
Silicon etching solution and method for producing silicon etching solution, method for treating substrate, and method for producing silicon device
AssigneeTokuyama Corporation
InventorsTatsuya Hitomi, Yoshiki Seike, Kohsuke Noro, Kohshiro Okimura
Life of this patent
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Abstract
A silicon etching solution including an aqueous alkaline solution containing a hypohalite ion in a range of 0.05 mmol/L or greater and 5 mmol/L or less and having a pH of 12.5 or greater at 24° C.
Claims7
A silicon etching solution consisting essentially of one or more alkaline compounds, a hypohalite serving as a supply source of hypohalite ions, and water,
- wherein the silicon etching solution is an aqueous alkaline solution with a hypohalite ion concentration in a range of 0.05 mmol/L or greater and 5 mmol/L or less, and a pH of 12.5 or greater at 24° C.
A silicon etching solution consisting essentially of one or more alkaline compounds, a hypohalite serving as a supply source of hypohalite ions, a quaternary ammonium ion, and water,
- wherein the silicon etching solution is an aqueous alkaline solution with a hypohalite ion concentration in a range of 0.05 mmol/L or greater and 5 mmol/L or less, and a pH of 12.5 or greater at 24° C.
Dependencies are inferred from the claim text.