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AssigneeNanjing Zuanxin Dianhuaxue Technology Co., Ltd.
InventorsQiuping Wei, Li Ma, Kechao Zhou, Lifeng Wang, Baofeng Wang, Haiping Shi
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A boron-doped diamond electrode with an ultra-high specific surface area, and a preparation method therefor and the application thereof are provided. The boron-doped diamond electrode includes a substrate and an electrode working layer arranged on a surface thereof, the substrate is polysilicon or monocrystal silicon with a high specific surface area, and the electrode working layer is a boron-doped diamond layer. The polysilicon with a high specific surface area is obtained by anisotropic etching and/or isotropic etching, and the monocrystal silicon with a high specific surface area is obtained by anisotropic etching. The boron-doped diamond layer includes a highly conductive layer, a corrosion-resistant layer, and a strongly electrocatalytically active layer, which have different boron contents. Compared with a traditional plate electrode, the present disclosure has a low cost and an extremely high specific surface area, provides a larger current intensity with a lower current density, and has broad application prospects.
A boron-doped diamond electrode, comprising a substrate and an electrode working layer, wherein a surface of the substrate is covered by the electrode working layer;
A boron-doped diamond electrode, comprising a substrate and an electrode working layer, wherein a surface of the substrate is covered by the electrode working layer;
Dependencies are inferred from the claim text.