Method of manufacturing semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJaeil Lee, Kyoungcho Na
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes forming a first layer on a wafer through a single shot exposure, a single shot of the first layer including first overlay marks; forming a second layer and a first photoresist film on the first layer; and performing an upper shot exposure and a lower shot exposure onto the first photoresist film based on a first overlay function of the single shot of the first layer generated based on absolute measurement of the first overlay marks. An upper shot transferred by the upper shot exposure and a lower shot transferred by the lower shot exposure are identical to each other, and an area of each of the upper shot and the lower shot is less than an area of the single shot of the first layer.
Claims8
A method of manufacturing a semiconductor device, the method comprising:
- forming a first layer on a wafer through a single shot exposure, a single shot of the first layer including first overlay marks;
- forming a second layer and a first photoresist film on the first layer;
- and
- performing an upper shot exposure and a lower shot exposure onto the first photoresist film based on a first overlay function of the single shot of the first layer generated based on absolute measurement of the first overlay marks,
- wherein an upper shot transferred by the upper shot exposure and a lower shot transferred by the lower shot exposure are identical to each other, and an area of each of the upper shot and the lower shot is less than an area of the single shot of the first layer.
Dependencies are inferred from the claim text.